| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,267 pcs
|
4267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The KSC5502D is a single NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for general-purpose switching and amplification applications requiring high voltage capability.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 600V, a maximum collector-base voltage (VCBO) of 1.2kV, and a maximum emitter-base voltage (VEBO) of 12V. The transistor can handle a maximum DC collector current of 2A.
This through-hole transistor is suitable for use in power supply circuits, motor control drivers, and other high-voltage switching applications. Its robust voltage ratings make it appropriate for designs where high breakdown voltages are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 600V.
The maximum DC collector current is 2A.
The maximum collector-base voltage (VCBO) is 1.2kV.
The maximum emitter-base voltage (VEBO) is 12V.