| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,821 pcs
|
12821 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The On Semiconductor KSC5402DTF is a high-performance NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component features a maximum collector-emitter breakdown voltage of 525V and can handle a continuous collector current of up to 2A.
With a maximum power dissipation of 30W and a transition frequency of 11MHz, the KSC5402DTF is designed for efficient operation. Its Vce saturation is rated at 750mV at 200mA collector current and 1A base current, ensuring low on-state voltage drop. The minimum DC current gain (hFE) is 6 at 1A collector current and 1V collector-emitter voltage.
This transistor is housed in a TO-252AA (DPak) surface mount package, making it ideal for space-constrained designs. The operating temperature range extends up to 150°C (TJ), providing robustness in demanding environments. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSC5402DTF has a maximum collector-emitter breakdown voltage of 525V.
The maximum continuous collector current (Ic) for the KSC5402DTF is 2A.
The KSC5402DTF has a maximum power dissipation of 30W.
The operating temperature range for the KSC5402DTF is up to 150°C (TJ).
The KSC5402DTF is supplied in a TO-252AA package, which is a surface mount type.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.