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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1 mA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=5 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = -1 mA, IC = 0) | |
| Breakdown Voltage Minimum | |
| Continuous Current (Maximum) | |
| Current | |
| Current Gain (Minimum @ IC=2 A, VCE=1 V) | |
| Current Gain (Minimum @ VCE=1 V, IC=0.8 A) | |
| Current Gain (Minimum @ VCE=1 V, IC=2 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Forward Voltage (Maximum @ IF=1 A) | |
| Forward Voltage (Maximum @ If = 2 A) | |
| Leakage Current (Maximum @ VCB=500 V, IE=0) | |
| Leakage Current (Maximum @ VEB= 9 V, IC= 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) | |
| Pulsed Current (Maximum) | |
| Reverse Recovery Time (Maximum @ IF=0.4 A) | |
| Reverse Recovery Time (Maximum @ IF=1 A) | |
| Reverse Recovery Time (Maximum @ IF=2 A) | |
| Saturation Voltage (Maximum @ IB=400 mA, IC=2 A) | |
| Saturation Voltage (Maximum @ IC=0.8 A, IB=0.08 A) | |
| Saturation Voltage (Maximum @ IC=2 A, IB=0.4 A) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time (Maximum @ VCC=15 V, VZ=300 V, IC=2 A, IB 1=0.4 A, IB 2=-0.4 A, LC=200 µH) | |
| Switching Time (Maximum @ VCC=300 V, IC=2 A, IB 1=0.4 A, IB 2=-1 A, RL=150Ω) | |
| Thermal Resistance (Typical) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC5305DTU is an NPN Silicon Transistor manufactured by ON Semiconductor, designed for high voltage and high speed power switch applications. It offers a collector-emitter voltage of 400V and a continuous collector current of 5A.
Key electrical characteristics include a minimum DC current gain (hFE) of 22 at 0.8A and 1V, and a maximum collector-emitter saturation voltage of 0.5V at 2A and 400mA base current. The transistor also features a built-in free-wheeling diode, which aids in efficient anti-saturation operation.
This device is suitable for half-bridge light ballast applications and requires low base drive. It comes in a TO-220-3 package and is designed for through-hole mounting.
With a power dissipation of 75W at 25°C case temperature and a junction temperature up to 150°C, the KSC5305DTU is a robust component for demanding power switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is 400V.
The maximum continuous collector current (IC) is 5A.
The operating junction temperature (TJ) ranges from -65°C to 150°C.
The KSC5305DTU is available in a TO-220-3 package.
The RoHS status is RoHS3 Compliant.