| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC5305DTU is an NPN Silicon Transistor manufactured by ON Semiconductor, designed for high voltage and high speed power switch applications. It offers a collector-emitter voltage of 400V and a continuous collector current of 5A.
Key electrical characteristics include a minimum DC current gain (hFE) of 22 at 0.8A and 1V, and a maximum collector-emitter saturation voltage of 0.5V at 2A and 400mA base current. The transistor also features a built-in free-wheeling diode, which aids in efficient anti-saturation operation.
This device is suitable for half-bridge light ballast applications and requires low base drive. It comes in a TO-220-3 package and is designed for through-hole mounting.
With a power dissipation of 75W at 25°C case temperature and a junction temperature up to 150°C, the KSC5305DTU is a robust component for demanding power switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) is 400V.
The maximum continuous collector current (IC) is 5A.
The operating junction temperature (TJ) ranges from -65°C to 150°C.
The KSC5305DTU is available in a TO-220-3 package.
The RoHS status is RoHS3 Compliant.