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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
336 pcs
|
336 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1 mA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=5 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = -1 mA, IC = 0) | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| Current Gain (Minimum @ VCE = 5 V, IC = 0.5 A) | |
| Current Gain (Minimum/Maximum @ VCE = 5 V, IC = 0.1 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Leakage Current (Maximum @ VCB = 800 V, IE = 0) | |
| Leakage Current (Maximum @ VEB = -5 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (@ TC = 25 °C) | |
| Power Dissipation (Unspecified condition) | |
| Saturation Voltage (Maximum @ IC = 0.75 A, IB = 0.15 A) | |
| Saturation Voltage (Maximum @ Ib, Ic) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time (Maximum @ VCC = 400 V, IC = 5 IB 1 = -2.5 IB 2 = 1 A, RL = 400) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| frequency (Unspecified condition) |
The KSC5026MOS is an NPN Silicon Transistor manufactured by ON Semiconductor, offering high voltage and high reliability. It is designed for applications requiring robust performance with a Collector-Emitter Voltage of 800V and a continuous Collector Current of 1.5A.
Key electrical characteristics include a DC Current Gain (hFE) ranging from 10 to 40 at 0.1A and 5V, and a Collector-Emitter Saturation Voltage (VCE(sat)) of up to 2V at 0.75A and 0.15A. The transistor also boasts a Current Gain Bandwidth Product (fT) of 15MHz.
Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the KSC5026MOS is suitable for various electronic circuits. Its operating junction temperature is rated up to 150°C, with a Collector Dissipation of 20W at 25°C.
This transistor is characterized by its wide Safe Operating Area (SOA) and high-speed switching capabilities, making it a reliable component for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the KSC5026MOS is 800V.
The continuous Collector Current (IC) rating for the KSC5026MOS is 1.5A.
The KSC5026MOS is supplied in a TO-126-3 package.
The operating junction temperature (TJ) for the KSC5026MOS is up to 150°C.
The minimum DC Current Gain (hFE) at 100mA and 5V is 10.
The Current Gain Bandwidth Product (fT) is 15MHz.