| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34,000 pcs
|
34000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor KSC388CYTA is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This component is designed for through-hole mounting, making it suitable for various electronic circuit applications.
Key electrical specifications include a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 50mA. The transistor offers a minimum DC current gain (hFE) of 20 at 12.5mA and 12.5V, with a Vce saturation of 200mV maximum at 1.5mA/15mA. Its transition frequency is rated at 300MHz, indicating suitability for moderate frequency applications.
The operating temperature range for the KSC388CYTA is from -55°C to 150°C (TJ), ensuring reliable performance in various thermal environments. The component has a maximum power dissipation of 300mW.
This transistor is specified with RoHS3 compliance and an MSL rating of 1, indicating it is suitable for standard electronic assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSC388CYTA has a collector-emitter breakdown voltage of 25V.
The KSC388CYTA is supplied in a TO-226-3, TO-92-3 (TO-226AA) Formed Leads package.
The operating temperature range for the KSC388CYTA is 150°C (TJ).
The KSC388CYTA is RoHS3 Compliant.
The maximum collector current for the KSC388CYTA is 50 mA.
The minimum DC Current Gain (hFE) for the KSC388CYTA is 20 at 12.5mA collector current and 12.5V collector-emitter voltage.
The transition frequency of the KSC388CYTA is 300MHz.
