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KSC3503DSTU The KSC3503DSTU is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a high voltage rating of 300V and a frequency of 150MHz.
Mfr Part #:

KSC3503DSTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSC3503DSTU is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a high voltage rating of 300V and a frequency of 150MHz.
✓ Total Stock: 480 pcs
$ Price Range: $0.99

KSC3503DSTU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
470 pcs
On Request
470 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request On Request On Request On Request
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KSC3503DSTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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KSC3503DSTU Description

Short technical summary and product information.

The KSC3503DSTU is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. It is designed for applications requiring high voltage, offering a Collector-Emitter Voltage (VCEO) of up to 300V and a Collector-Base Voltage (VCBO) of 300V. This transistor operates with a continuous collector current of 100mA and a pulse current of 200mA.

 

Key electrical characteristics include a high frequency gain bandwidth product of 150MHz, a DC current gain (hFE) ranging from 60 to 120 at 10mA and 10V, and a low collector-emitter saturation voltage of 0.6V at 20mA and 2mA. The device also exhibits a low reverse transfer capacitance (Cre) of 1.8pF at 30V.

 

Packaged in a TO-126-3 (TO-225AA) through-hole package, the KSC3503DSTU is suitable for various amplifier and output applications. It operates within a junction and storage temperature range of -50°C to +150°C. The device is RoHS compliant and Pb-Free.

 

Applications include audio and voltage amplification, current sources, and CRT display video output stages. Its complement is the KSA1381.

KSC3503DSTU Quick Information

Product Type: NPN Transistor
Canonical Name: KSC3503 NPN Epitaxial Silicon Transistor
Subcategory: Single

KSC3503DSTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC3503DSTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC3503DSTU Features

  • High voltage rating of 300V.
  • 150MHz gain bandwidth product.
  • Low reverse transfer capacitance.
  • TO-126-3 through-hole package.
  • Complementary to KSA1381.

KSC3503DSTU Applications

  • Suitable for audio amplifiers.
  • Used in voltage amplifier circuits.
  • Applicable for current source designs.
  • Can be used in video output stages.
  • Designed for general purpose amplification.

KSC3503DSTU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSC3503DSTU?

The maximum collector-emitter voltage (BVCEO) for the KSC3503DSTU is 300 V.

What is the continuous collector current rating?

The continuous collector current (IC) for the KSC3503DSTU is 100 mA.

What is the operating temperature range?

The operating temperature range for the KSC3503DSTU is -50°C to +150°C.

What package type is the KSC3503DSTU supplied in?

The KSC3503DSTU is supplied in a TO-126-3 package.

What is the gain bandwidth product of this transistor?

The gain bandwidth product (fT) for the KSC3503DSTU is 150 MHz.

Is the KSC3503DSTU RoHS compliant?

Yes, the KSC3503DSTU is RoHS compliant.

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