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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
470 pcs
|
470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 A, IE = 0) | |
| Breakdown Voltage (Minimum @ IC=-1 mA, IB=0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 A, IC = 0) | |
| Collector Current (Pulse) | |
| Collector Cut-Off Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 20 mA, IB = 2 mA) | |
| Continuous Collector Current (Maximum) | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (Minimum/Maximum @ VCE = 10 V, IC = 10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Frequency | |
| High Voltage | |
| Low Reverse Transfer Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typical/Maximum @ VCB = 30 V, f = 1 MHz) | |
| Pb-Free | |
| Power | |
| RoHS Compliant | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Total Power Dissipation (Maximum @ TC = 125 °C) | |
| Total Power Dissipation (Maximum @ Tc=25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC3503DSTU is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. It is designed for applications requiring high voltage, offering a Collector-Emitter Voltage (VCEO) of up to 300V and a Collector-Base Voltage (VCBO) of 300V. This transistor operates with a continuous collector current of 100mA and a pulse current of 200mA.
Key electrical characteristics include a high frequency gain bandwidth product of 150MHz, a DC current gain (hFE) ranging from 60 to 120 at 10mA and 10V, and a low collector-emitter saturation voltage of 0.6V at 20mA and 2mA. The device also exhibits a low reverse transfer capacitance (Cre) of 1.8pF at 30V.
Packaged in a TO-126-3 (TO-225AA) through-hole package, the KSC3503DSTU is suitable for various amplifier and output applications. It operates within a junction and storage temperature range of -50°C to +150°C. The device is RoHS compliant and Pb-Free.
Applications include audio and voltage amplification, current sources, and CRT display video output stages. Its complement is the KSA1381.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (BVCEO) for the KSC3503DSTU is 300 V.
The continuous collector current (IC) for the KSC3503DSTU is 100 mA.
The operating temperature range for the KSC3503DSTU is -50°C to +150°C.
The KSC3503DSTU is supplied in a TO-126-3 package.
The gain bandwidth product (fT) for the KSC3503DSTU is 150 MHz.
Yes, the KSC3503DSTU is RoHS compliant.