KSC2881YTF The KSC2881YTF is an NPN epitaxial silicon transistor from On Semiconductor. It features a 120V collector-emitter voltage and 800mA collector current, suitable for power amplifier applications.
Mfr Part #:

KSC2881YTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSC2881YTF is an NPN epitaxial silicon transistor from On Semiconductor. It features a 120V collector-emitter voltage and 800mA collector current, suitable for power amplifier applications.
✓ Total Stock: 204,000 pcs
$ Price Range: $0.99

KSC2881YTF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

KSC2881YTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC2881YTF Description

Short technical summary and product information.

The KSC2881YTF is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for power amplifier applications and offers a collector-emitter voltage of 120V and a continuous collector current of up to 800mA.

 

Key electrical characteristics include a typical DC current gain (hFE) ranging from 80 to 240 at 100mA and 5V, and a current gain bandwidth product (fT) of 120MHz. The transistor has a collector-emitter saturation voltage (VCE(sat)) of 1V maximum at 500mA collector current and 50mA base current.

 

This device is housed in a surface-mount SOT-89-3 package, also known as TO-243AA. It has a maximum junction temperature of 150°C and a power dissipation of 1W when mounted on a ceramic board. The KSC2881YTF is a complement to the KSA1201 transistor.

 

Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.

KSC2881YTF Quick Information

Product Type: NPN Transistor
Canonical Name: KSC2881YTF NPN Epitaxial Silicon Transistor
Subcategory: Single

KSC2881YTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC2881YTF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC2881YTF Features

  • NPN epitaxial silicon transistor
  • 120V collector-emitter voltage
  • 800mA maximum collector current
  • 120MHz current gain bandwidth product
  • Surface mount SOT-89-3 package

KSC2881YTF Applications

  • Suitable for high-voltage switching circuits
  • Used in power amplification applications
  • Ideal for compact electronic designs
  • Applicable in automotive and industrial electronics

KSC2881YTF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSC2881YTF?

The maximum collector-emitter voltage (VCEO) for the KSC2881YTF is 120V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 800mA.

What is the typical current gain bandwidth product (fT)?

The typical current gain bandwidth product (fT) is 120MHz.

What is the DC current gain (hFE) range?

The DC current gain (hFE) ranges from 80 to 240 at 100mA collector current and 5V collector-emitter voltage.

What is the package type for the KSC2881YTF?

The KSC2881YTF is supplied in a surface mount SOT-89-3 package.

What is the operating junction temperature?

The maximum operating junction temperature is 150°C.

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