| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC2881YTF is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for power amplifier applications and offers a collector-emitter voltage of 120V and a continuous collector current of up to 800mA.
Key electrical characteristics include a typical DC current gain (hFE) ranging from 80 to 240 at 100mA and 5V, and a current gain bandwidth product (fT) of 120MHz. The transistor has a collector-emitter saturation voltage (VCE(sat)) of 1V maximum at 500mA collector current and 50mA base current.
This device is housed in a surface-mount SOT-89-3 package, also known as TO-243AA. It has a maximum junction temperature of 150°C and a power dissipation of 1W when mounted on a ceramic board. The KSC2881YTF is a complement to the KSA1201 transistor.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSC2881YTF is 120V.
The maximum continuous collector current (IC) is 800mA.
The typical current gain bandwidth product (fT) is 120MHz.
The DC current gain (hFE) ranges from 80 to 240 at 100mA collector current and 5V collector-emitter voltage.
The KSC2881YTF is supplied in a surface mount SOT-89-3 package.
The maximum operating junction temperature is 150°C.