| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,344 pcs
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5344 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC2690AYS from On Semiconductor is an NPN epitaxial silicon transistor. It is designed for applications such as audio frequency and high-frequency power amplifiers. This device offers a maximum collector-emitter voltage (Vceo) of 160V and a continuous collector current (Ic) of 1.2A.
Key electrical characteristics include a typical current gain bandwidth product (ft) of 155MHz and a minimum DC current gain (hFE) of 35 at 5mA collector current. The transistor is housed in a TO-126-3 package, suitable for through-hole mounting.
This transistor is a complement to the KSA1220A. It operates within a junction temperature range of -55°C to 150°C. The device is Pb-Free, indicating compliance with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the KSC2690AYS is 160V.
The maximum continuous collector current (Ic) for the KSC2690AYS is 1.2A.
The typical current gain bandwidth product (ft) for the KSC2690AYS is 155MHz.
The operating junction temperature range for the KSC2690AYS is -55°C to 150°C.
The KSC2690AYS is supplied in a TO-126-3 package.