KSC2690AYS The On Semiconductor KSC2690AYS is an NPN epitaxial silicon transistor designed for audio and high-frequency power amplifier applications. It features a 160V collector-emitter voltage and 1.2A collector current.
Mfr Part #:

KSC2690AYS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSC2690AYS is an NPN epitaxial silicon transistor designed for audio and high-frequency power amplifier applications. It features a 160V collector-emitter voltage and 1.2A collector current.
Total Stock: 5,344 pcs
$ Price Range: $0.99

KSC2690AYS Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,344 pcs
5344 pcs On Request 1 On Request On Request On Request On Request On Request

KSC2690AYS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (DC)
Base-Emitter Saturation Voltage (Max) @ Ib, Ic
Collector Current (Pulse)
Current
DC Current Gain (Minimum @ VCE = 5 V, IC = 0.3 A)
DC Current Gain (Minimum @ VCE = 5 V, IC = 5 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating Temperature - Maximum
Output Capacitance
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Reverse Voltage (Maximum)
Storage Temperature
Supplier Device Package
Transistor Type
Transition Frequency (Typical @ VCE = 5 V, IC = 0.2 A)
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ IC=1 A, IB=0.2 A)
Voltage

KSC2690AYS Description

Short technical summary and product information.

The KSC2690AYS from On Semiconductor is an NPN epitaxial silicon transistor. It is designed for applications such as audio frequency and high-frequency power amplifiers. This device offers a maximum collector-emitter voltage (Vceo) of 160V and a continuous collector current (Ic) of 1.2A.

 

Key electrical characteristics include a typical current gain bandwidth product (ft) of 155MHz and a minimum DC current gain (hFE) of 35 at 5mA collector current. The transistor is housed in a TO-126-3 package, suitable for through-hole mounting.

 

This transistor is a complement to the KSA1220A. It operates within a junction temperature range of -55°C to 150°C. The device is Pb-Free, indicating compliance with environmental standards.

KSC2690AYS Quick Information

Product Type: NPN Transistor
Series: KSC2690A
Canonical Name: KSC2690AYS NPN Epitaxial Silicon Transistor
Subcategory: Single

KSC2690AYS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC2690AYS Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC2690AYS Features

  • NPN epitaxial silicon transistor
  • 160V collector-emitter voltage
  • 1.2A continuous collector current
  • 155MHz typical current gain bandwidth
  • TO-126-3 through-hole package

KSC2690AYS Applications

  • Used in power regulation circuits
  • Suitable for audio amplification
  • Ideal for switching applications
  • Designed for signal processing tasks

KSC2690AYS FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSC2690AYS?

The maximum collector-emitter voltage (Vceo) for the KSC2690AYS is 160V.

What is the maximum continuous collector current?

The maximum continuous collector current (Ic) for the KSC2690AYS is 1.2A.

What is the typical current gain bandwidth product?

The typical current gain bandwidth product (ft) for the KSC2690AYS is 155MHz.

What is the operating temperature range?

The operating junction temperature range for the KSC2690AYS is -55°C to 150°C.

What package type is the KSC2690AYS supplied in?

The KSC2690AYS is supplied in a TO-126-3 package.

Home
Account

Categories