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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,795 pcs
|
11795 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,237 pcs
|
7237 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage (Minimum/Maximum @ VCE = 5 V, IC = 5 mA) | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Cut-Off Current | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product (Minimum/Maximum @ V CE = 5 V, IC = 200 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE = -5 V, IC = -200 mA) | |
| DC Current Gain (hFE) @ Ic, Vce | |
| DC Current Gain (hFE) Classification (Minimum/Maximum @ O) | |
| DC Current Gain (hFE) Classification (Minimum/Maximum @ R) | |
| DC Current Gain (hFE) Classification (Minimum/Maximum @ Y) | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC2383OTA is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 160V and a continuous collector current (IC) of 1A. The DC current gain (hFE) ranges from 60 to 320 at 200mA and 5V. The transistor has a maximum collector-emitter saturation voltage (VCE(sat)) of 1.5V at 500mA and 50mA base current. Its current gain bandwidth product (fT) is up to 100MHz at 200mA and 5V.
The KSC2383OTA is supplied in a TO-92-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C, with a power dissipation of 900mW. The thermal resistance from junction to ambient is 138°C/W.
This transistor is suitable for various electronic circuits requiring reliable NPN amplification or switching capabilities within its specified voltage and current ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSC2383OTA is 160 V.
The KSC2383OTA has a continuous collector current (IC) rating of 1 A.
The KSC2383OTA is supplied in a TO-92-3 package.
The operating junction temperature (TJ) for the KSC2383OTA is up to 150°C.
The power dissipation (PD) for the KSC2383OTA is 900 mW.
The DC current gain (hFE) of the KSC2383OTA is between 60 and 320 at 200mA and 5V.
The collector-emitter saturation voltage (VCE(sat)) for the KSC2383OTA is a maximum of 1.5V at 500mA collector current and 50mA base current.