| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,156 pcs
|
22156 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC2330OTA is a single NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose applications requiring a breakdown voltage of up to 300V and a continuous collector current of 100mA.
Key electrical characteristics include a DC current gain (hFE) of 70 minimum at 20mA and 10V, and a Vce saturation of 500mV maximum at 1mA and 10mA. The transistor operates at frequencies up to 50MHz and has a power dissipation rating of 1W.
This component is housed in a TO-92-3 package, also known as TO-226-3, with long body formed leads, suitable for through-hole mounting. The operating temperature range is specified from -55°C to 150°C (TJ).
The KSC2330OTA is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage is 300V.
The continuous collector current is 100mA.
The minimum DC current gain is 70 at 20mA and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The KSC2330OTA is supplied in a TO-92-3 package, also known as TO-226-3, with long body formed leads.