KSC2328AOTA The ON Semiconductor KSC2328AOTA is an NPN epitaxial silicon transistor designed for audio power amplifier applications. It features a 30V collector-emitter voltage and 2A collector current.
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KSC2328AOTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor KSC2328AOTA is an NPN epitaxial silicon transistor designed for audio power amplifier applications. It features a 30V collector-emitter voltage and 2A collector current.
Total Stock: 60,489 pcs
$ Price Range: $0.99

KSC2328AOTA Available from 1 distributor

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KSC2328AOTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage (VBE(ON))
Breakdown Voltage (Minimum @ IC = 10 mA, IB = 0)
Breakdown Voltage (Minimum @ IC=100 μA, IE=0)
Breakdown Voltage (Minimum @ IE = -1 mA, IC = 0)
Collector Current
Collector Emitter Saturation Voltage (Maximum @ 30 mA, 1.5 A)
Collector Emitter Saturation Voltage (Maximum @ IC = 1.5 A, IB = 0.03 A)
Collector Output Capacitance (COB)
Collector-Base Voltage
Collector-Emitter Voltage
Current
Current Gain Bandwidth Product (fT)
DC Current Gain (Minimum @ 500 mA, 2 V)
DC Current Gain (Minimum/Maximum @ VCE = 2 V, IC = 500 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Junction Temperature
Lead Spacing
Lead Style
Leakage Current (Maximum @ VCB = -30 V, IE = 0)
Leakage Current (Maximum @ VEB = -5 V, IC = 0)
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC2328AOTA Description

Short technical summary and product information.

The KSC2328AOTA from ON Semiconductor is an NPN epitaxial silicon transistor suitable for audio power amplifier applications, including 3W output stages. It is a complement to the KSA928A transistor.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 30V and a continuous collector current rating of 2A. The DC current gain (hFE) ranges from 100 to 320 at 500mA and 2V. The transistor operates with a junction temperature up to 150°C and has a power dissipation of 1W. Its current gain bandwidth product (fT) is 120MHz.

 

This transistor is housed in a TO-92-3 package with formed leads, designed for through-hole mounting. The operating temperature range is specified up to 150°C (TJ).

KSC2328AOTA Quick Information

Product Type: NPN Transistor
Canonical Name: KSC2328AOTA NPN Epitaxial Silicon Transistor
Subcategory: NPN

KSC2328AOTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC2328AOTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC2328AOTA Features

  • NPN epitaxial silicon transistor.
  • 30V collector-emitter voltage rating.
  • 2A continuous collector current.
  • 120MHz gain bandwidth product.
  • TO-92 package for through-hole mounting.

KSC2328AOTA Applications

  • Used in switching power supplies
  • Suitable for signal amplification
  • Ideal for driver circuits
  • Applicable in low to medium power applications

KSC2328AOTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the KSC2328AOTA?

The collector-emitter voltage is 30V.

What is the maximum collector current for the KSC2328AOTA?

The maximum collector current is 2A.

What is the operating temperature range for the KSC2328AOTA?

The operating junction temperature is up to 150°C.

What package type is the KSC2328AOTA supplied in?

The KSC2328AOTA is supplied in a TO-92-3 package.

What is the gain bandwidth product of the KSC2328AOTA?

The gain bandwidth product is 120MHz.

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