KSC2316YTA The On Semiconductor KSC2316YTA is a single NPN bipolar junction transistor designed for general switching and amplification. It features a 120V collector-emitter breakdown voltage and an 800mA maximum collector current.
Mfr Part #:

KSC2316YTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSC2316YTA is a single NPN bipolar junction transistor designed for general switching and amplification. It features a 120V collector-emitter breakdown voltage and an 800mA maximum collector current.
Total Stock: 162,567 pcs
$ Price Range: $0.99

KSC2316YTA Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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162,567 pcs
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KSC2316YTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Transition Frequency
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC2316YTA Description

Short technical summary and product information.

The KSC2316YTA from On Semiconductor is a single NPN silicon planar transistor suitable for general switching and amplification applications. It offers a high collector-emitter breakdown voltage of 120V and can handle a maximum collector current of 800mA.

 

This transistor boasts a minimum DC current gain (hFE) of 120 at 100mA and 5V, with a Vce saturation of 1V maximum at 50mA/500mA. Its transition frequency is rated at 120MHz, indicating good high-frequency performance. The device has a power dissipation of 900mW and can operate at junction temperatures up to 150°C.

 

Packaged in a standard TO-92-3 through-hole configuration, the KSC2316YTA is designed for easy PCB assembly. Its formed leads are suitable for both hand and automated insertion processes. The low collector cutoff current (ICBO) of 100nA makes it suitable for sensitive circuit designs.

 

Common applications include signal amplification, low to medium power switching, audio and RF circuit stages, and general-purpose analog designs. It is particularly useful for through-hole manufacturing environments and legacy board designs requiring reliable performance.

KSC2316YTA Quick Information

Product Type: NPN Transistor
Canonical Name: KSC2316YTA NPN Bipolar Junction Transistor
Subcategory: Single NPN

KSC2316YTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC2316YTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC2316YTA Features

  • 120V collector-emitter breakdown voltage.
  • 800mA maximum collector current.
  • Minimum DC gain of 120 at 100mA.
  • 120MHz transition frequency.
  • TO-92-3 through-hole package.

KSC2316YTA Applications

  • General signal amplification.
  • Low to medium power switching.
  • Audio and RF circuit stages.
  • Motor control applications.
  • General-purpose analog designs.

KSC2316YTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the KSC2316YTA?

The collector-emitter breakdown voltage for the KSC2316YTA is 120V.

What is the maximum collector current of the KSC2316YTA transistor?

The KSC2316YTA transistor has a maximum collector current of 800mA.

What is the minimum DC current gain (hFE) for the KSC2316YTA?

The minimum DC current gain (hFE) for the KSC2316YTA is 120 at 100mA collector current and 5V collector-emitter voltage.

What is the operating temperature range for the KSC2316YTA?

The KSC2316YTA can operate at junction temperatures up to 150°C.

What package type is the KSC2316YTA supplied in?

The KSC2316YTA is supplied in a TO-92-3 package, specifically a TO-226-3, TO-92-3 Long Body with formed leads.

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