KSC2316YBU The KSC2316YBU is an NPN bipolar junction transistor from On Semiconductor. It features a 120V collector-emitter breakdown voltage and 800mA collector current.
Mfr Part #:

KSC2316YBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSC2316YBU is an NPN bipolar junction transistor from On Semiconductor. It features a 120V collector-emitter breakdown voltage and 800mA collector current.
Total Stock: 3,000 pcs
$ Price Range: $0.99

KSC2316YBU Available from 1 distributor

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KSC2316YBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current
Collector Cutoff Current
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation
Supplier Device Package
Transistor Type
Transition Frequency
Vce Saturation
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC2316YBU Description

Short technical summary and product information.

The KSC2316YBU is a single NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for general switching and amplification applications.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 120V and a maximum collector current of 800mA. The transistor offers a minimum DC current gain (hFE) of 120 at 100mA and 5V, with a transition frequency of 120MHz, indicating good high-frequency performance. The saturation voltage (Vce) is a maximum of 1V at 50mA collector current and 500mA base current. It also features a low collector cutoff current of 100nA (ICBO).

 

This device is housed in a TO-92-3 package, also referred to as TO-226-3 Long Body, and is designed for through-hole mounting. It can operate reliably at junction temperatures up to 150°C and has a power dissipation rating of 900mW.

 

The KSC2316YBU is suitable for various applications including signal amplification, low to medium power switching, audio and RF circuit stages, and general-purpose analog designs. Its through-hole package makes it compatible with traditional PCB assembly processes.

KSC2316YBU Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: KSC2316YBU NPN Bipolar Junction Transistor
Subcategory: Single

KSC2316YBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC2316YBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC2316YBU Features

  • 120V collector-emitter breakdown voltage.
  • 800mA maximum collector current.
  • 120 minimum DC current gain.
  • 120MHz transition frequency.
  • TO-92-3 through-hole package.

KSC2316YBU Applications

  • Used for signal amplification.
  • Suitable for low power switching.
  • Applicable in audio circuit stages.
  • Can be used in RF circuit stages.
  • General purpose analog designs.

KSC2316YBU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSC2316YBU?

The maximum collector-emitter breakdown voltage is 120V.

What is the maximum continuous collector current for the KSC2316YBU?

The maximum continuous collector current is 800mA.

What is the minimum DC current gain (hFE) of the KSC2316YBU?

The minimum DC current gain (hFE) is 120 at 100mA collector current and 5V collector-emitter voltage.

What is the transition frequency of the KSC2316YBU?

The transition frequency is 120MHz.

What is the package type for the KSC2316YBU?

The KSC2316YBU is supplied in a TO-92-3 package, also known as TO-226-3 Long Body.

What is the maximum operating junction temperature for the KSC2316YBU?

The maximum operating junction temperature is 150°C.

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