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KSC1730OTA The On Semiconductor KSC1730OTA is an NPN RF transistor designed for VHF and UHF tuner oscillator applications. It offers a high current gain bandwidth product and is housed in a TO-92 package.
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KSC1730OTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSC1730OTA is an NPN RF transistor designed for VHF and UHF tuner oscillator applications. It offers a high current gain bandwidth product and is housed in a TO-92 package.
✓ Total Stock: 7,862 pcs
$ Price Range: $0.99

KSC1730OTA Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
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7,862 pcs
On Request
7862 pcs On Request 1 On Request On Request 04+ On Request On Request
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KSC1730OTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating Voltage
Power
Reverse Voltage
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Voltage
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KSC1730OTA Description

Short technical summary and product information.

The KSC1730OTA from On Semiconductor is an NPN epitaxial silicon transistor specifically designed for RF applications, including VHF and UHF tuner oscillators. It features a collector-emitter breakdown voltage of 15V and a collector current capability of up to 50mA.

 

This transistor boasts a high current gain bandwidth product (fT) of up to 1100MHz at 5mA and 10V, making it suitable for high-frequency circuits. The output capacitance (Cob) is a maximum of 1.5pF at 1MHz and 10V.

 

With a maximum power dissipation of 250mW and an operating temperature range of -55°C to 150°C, the KSC1730OTA is built for reliable performance. It is supplied in a standard TO-92 package with formed leads, suitable for through-hole mounting.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 240 at 5mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of 0.5V maximum at 10mA collector current and 1mA base current.

KSC1730OTA Quick Information

Product Type: NPN RF Transistor
Canonical Name: NPN Epitaxial Silicon Transistor
Subcategory: RF Transistor

KSC1730OTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC1730OTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC1730OTA Features

  • NPN RF transistor for high frequencies.
  • 15V collector-emitter breakdown voltage.
  • 1.1GHz current gain bandwidth product.
  • 50mA maximum collector current.
  • TO-92 package for through-hole mounting.

KSC1730OTA Applications

  • Suitable for RF amplifier circuits.
  • Used in high-frequency oscillators.
  • Ideal for VHF and UHF tuner applications.
  • Applicable in radio communication transmitters.
  • Employed in signal switching and modulation.

KSC1730OTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the KSC1730OTA?

The collector-emitter breakdown voltage (BVCEO) for the KSC1730OTA is 15V.

What is the maximum collector current of the KSC1730OTA?

The KSC1730OTA has a maximum collector current (IC) of 50mA.

What is the transition frequency (fT) of the KSC1730OTA transistor?

The current gain bandwidth product (fT) is typically 800MHz to 1100MHz at 5mA and 10V, and up to 1.1GHz.

What is the operating temperature range for the KSC1730OTA?

The KSC1730OTA can operate in a temperature range of -55°C to 150°C.

What package type is the KSC1730OTA supplied in?

The KSC1730OTA is supplied in a TO-92-3 package, also referred to as TO-226-3, TO-92-3 (TO-226AA) with formed leads.

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