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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,160 pcs
|
1160 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 10 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ IC=100 μA, IE=0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Collector Current (Maximum) | |
| Collector Cut-Off Current | |
| Current | |
| DC Current Gain (Minimum @ 10 mA, 10 V) | |
| DC Current Gain (Minimum/Maximum @ VCE = 10 V, IC = 10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC current gain classification | |
| Frequency | |
| Gain Bandwidth Product (Maximum) | |
| Gain Bandwidth Product (Minimum/Maximum @ VCE = 30 V, IC = 10 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) | |
| Saturation Voltage (Maximum @ 5 mA, 50 mA) | |
| Saturation Voltage (Maximum @ IC=-50 mA, IB=-5 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC1507YTU is an NPN epitaxial silicon transistor manufactured by On Semiconductor. It is designed for applications requiring high voltage capabilities, featuring a collector-emitter voltage (VCEO) of 300V and a collector current (IC) of up to 200µA.
This transistor offers a DC current gain (hFE) ranging from 40 to 240 and a current gain bandwidth product (fT) of at least 40MHz, with a typical maximum of 80MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2V at 5mA collector current and 5mA base current. The output capacitance (Cob) is a maximum of 4pF at 1MHz.
Packaged in a TO-220-3 configuration, the KSC1507YTU is suitable for through-hole mounting. It operates at junction temperatures up to 150°C and has a power dissipation rating of 15W at 25°C case temperature. The storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (BVCEO) for the KSC1507YTU is 300V.
The maximum collector current (IC) for the KSC1507YTU is 200µA.
The current gain bandwidth product (fT) for the KSC1507YTU is a minimum of 40MHz and a maximum of 80MHz.
The KSC1507YTU can operate at junction temperatures up to 150°C.
The KSC1507YTU is available in a TO-220-3 package.