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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,894 pcs
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13894 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSC1009YTA from ON Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. This device is designed for through-hole mounting and features a maximum collector-emitter voltage of 140V and a continuous collector current of up to 700mA.
With a DC current gain (hFE) of at least 120 at 50mA and 2V, and a transition frequency of 50MHz, the KSC1009YTA is suitable for various amplification and switching applications. It can dissipate up to 800mW of power and operates at temperatures up to 150°C (TJ).
The transistor's saturation voltage (Vce) is a maximum of 700mV at 20mA collector current and 200mA base current. Its RoHS3 compliance status is noted, though it requires verification.
This component is ideal for engineers seeking a reliable NPN transistor for through-hole designs requiring moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 140V.
The maximum continuous collector current is 700mA.
The minimum DC current gain (hFE) is 120 at 50mA collector current and 2V collector-emitter voltage.
The operating temperature is up to 150°C (TJ).
It is supplied in a TO-92-3 package.
The KSC1009YTA is designed for through-hole mounting.