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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10,728 pcs
|
10728 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,291 pcs
|
5291 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | |
| Collector Current (Maximum) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = -500 mA, IB = -50 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ib = 50 mA, Ic = 500 mA) | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product (Typical @ VCE = -10 V, IC = -50 mA) | |
| Current Gain Bandwidth Product (Typical) | |
| DC Current Gain (Minimum/Typical/Maximum @ VCE = -2 V, IC = -50 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Output Capacitance (VCB = 10 V, IE = 0, f = 1 MHz) | |
| Power | |
| Power Dissipation | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC1008YBU is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching applications. Manufactured by On Semiconductor, this component offers a high collector-base voltage of 80V and a continuous collector current of up to 700mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 400, a collector-emitter saturation voltage (VCE(sat)) of up to 0.4V at 500mA, and a base-emitter saturation voltage (VBE(sat)) of up to 1.10V. The current gain bandwidth product (fT) is typically 50MHz.
This transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates at a junction temperature up to 150°C and has a power dissipation rating of 800mW. The device is also noted as being Pb-Free.
Its complement is the KSA708. The KSC1008YBU is suitable for various general-purpose amplification and switching circuits where its specific voltage and current ratings are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSC1008YBU is 60V.
The KSC1008YBU transistor has a maximum collector current (IC) of 700mA.
The power dissipation (PD) for the KSC1008YBU transistor is 800mW.
The KSC1008YBU transistor is supplied in a TO-92-3 package.
The operating junction temperature (TJ) for the KSC1008YBU transistor is up to 150°C.
The DC current gain (hFE) of the KSC1008YBU transistor is between 40 and 400 at 50mA collector current and 2V collector-emitter voltage.
The current gain bandwidth product (fT) for the KSC1008YBU transistor is typically 50MHz.