| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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53,015 pcs
|
53015 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,585 pcs
|
15585 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The KSC1008OBU is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching applications. Manufactured by ON Semiconductor, this component offers a high collector-base voltage of 80V and a collector-emitter voltage of 60V. It can handle a continuous collector current of up to 700mA.
The transistor exhibits a DC current gain (hFE) ranging from 70 to 140 at 50mA and 2V. Its current gain bandwidth product (fT) is typically 50MHz at 50mA and 10V. The saturation voltage (VCE(sat)) is a maximum of 0.4V at 500mA and 50mA base current, with a base-emitter saturation voltage (VBE(sat)) of up to 1.1V under the same conditions.
Packaged in a TO-92-3 through-hole configuration, the KSC1008OBU is suitable for various electronic circuits. Its operating junction temperature ranges from -55°C to 150°C, with a maximum power dissipation of 800mW. This device is a complement to the KSA708 transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSC1008OBU is 60V.
The KSC1008OBU can handle a maximum continuous collector current of 700mA.
The typical gain bandwidth product (fT) for the KSC1008OBU is 50MHz at 50mA and 10V.
The KSC1008OBU is supplied in a TO-92-3 package.
The operating temperature range for the KSC1008OBU is -55°C to 150°C.