KSC1008OBU The KSC1008OBU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a collector-emitter voltage of 60V and a collector current of 700mA.
Mfr Part #:

KSC1008OBU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSC1008OBU is an NPN epitaxial silicon transistor from ON Semiconductor. It features a collector-emitter voltage of 60V and a collector current of 700mA.
✓ Total Stock: 68,600 pcs
$ Price Range: $0.99

KSC1008OBU Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
53,015 pcs
53015 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15,585 pcs
15585 pcs On Request 1 On Request On Request 21+ On Request On Request

KSC1008OBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC1008OBU Description

Short technical summary and product information.

The KSC1008OBU is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching applications. Manufactured by ON Semiconductor, this component offers a high collector-base voltage of 80V and a collector-emitter voltage of 60V. It can handle a continuous collector current of up to 700mA.

 

The transistor exhibits a DC current gain (hFE) ranging from 70 to 140 at 50mA and 2V. Its current gain bandwidth product (fT) is typically 50MHz at 50mA and 10V. The saturation voltage (VCE(sat)) is a maximum of 0.4V at 500mA and 50mA base current, with a base-emitter saturation voltage (VBE(sat)) of up to 1.1V under the same conditions.

 

Packaged in a TO-92-3 through-hole configuration, the KSC1008OBU is suitable for various electronic circuits. Its operating junction temperature ranges from -55°C to 150°C, with a maximum power dissipation of 800mW. This device is a complement to the KSA708 transistor.

KSC1008OBU Quick Information

Product Type: NPN Transistor
Canonical Name: KSC1008OBU NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - Single

KSC1008OBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC1008OBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC1008OBU Features

  • NPN epitaxial silicon transistor.
  • 60V collector-emitter voltage rating.
  • 700mA maximum collector current.
  • 50MHz typical gain bandwidth product.
  • TO-92-3 through-hole package.

KSC1008OBU Applications

  • Suitable for low-frequency amplifier circuits.
  • Used in switching applications requiring high collector voltage.
  • Ideal for general-purpose NPN transistor applications.
  • Applicable in power switching and signal amplification.
  • Suitable for through-hole mounting in various electronic devices.

KSC1008OBU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSC1008OBU?

The maximum collector-emitter voltage (VCEO) for the KSC1008OBU is 60V.

What is the maximum continuous collector current of the KSC1008OBU transistor?

The KSC1008OBU can handle a maximum continuous collector current of 700mA.

What is the typical gain bandwidth product (fT) for the KSC1008OBU?

The typical gain bandwidth product (fT) for the KSC1008OBU is 50MHz at 50mA and 10V.

What package type is the KSC1008OBU supplied in?

The KSC1008OBU is supplied in a TO-92-3 package.

What is the operating temperature range for the KSC1008OBU?

The operating temperature range for the KSC1008OBU is -55°C to 150°C.

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