KSC1008GTA The On Semiconductor KSC1008GTA is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching. It features a collector-emitter voltage of 60V and a collector current of 700mA.
Mfr Part #:

KSC1008GTA

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSC1008GTA is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching. It features a collector-emitter voltage of 60V and a collector current of 700mA.
Total Stock: 13,425 pcs
$ Price Range: $0.99

KSC1008GTA Available from 1 distributor

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KSC1008GTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Current
Collector-Base Voltage
Collector-Emitter Saturation Voltage (Maximum @ IC = -500 mA, IB = -50 mA)
Collector-Emitter Voltage
Current
Current Gain Bandwidth Product (Minimum/Typical @ VCE = 10 V, IC = 50 mA)
DC Current Gain (Minimum/Maximum @ VCE = 2 V, IC = 50 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
DC current gain classification
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSC1008GTA Description

Short technical summary and product information.

The KSC1008GTA from On Semiconductor is an NPN epitaxial silicon transistor suitable for low-frequency amplifier and medium-speed switching applications. It offers a high collector-base voltage of 80V and a collector current capability of 700mA.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 400 at 50mA and 2V, a collector-emitter saturation voltage (VCE(sat)) of up to 0.4V at 500mA and 50mA base current, and a base-emitter saturation voltage (VBE(sat)) of up to 1.10V under the same conditions. The current gain bandwidth product (fT) is 30MHz minimum and 50MHz typical at 50mA and 10V.

 

This transistor is housed in a TO-92-3 package, designed for through-hole mounting. It has a power dissipation rating of 800mW and a junction temperature of up to 150°C. The thermal resistance from junction to ambient is 156°C/W.

 

The KSC1008GTA is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

KSC1008GTA Quick Information

Product Type: NPN Transistor
Canonical Name: KSC1008GTA NPN Epitaxial Silicon Transistor
Subcategory: Single

KSC1008GTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSC1008GTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSC1008GTA Features

  • NPN epitaxial silicon transistor.
  • 60V collector-emitter voltage rating.
  • 700mA maximum collector current.
  • 800mW power dissipation.
  • TO-92-3 through-hole package.

KSC1008GTA Applications

  • Used in high-voltage switching circuits
  • Suitable for power regulation applications
  • Ideal for motor control modules
  • Applicable in signal amplification tasks

KSC1008GTA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector current rating for the KSC1008GTA?

The KSC1008GTA has a collector current rating of 700 mA.

What is the maximum collector-emitter voltage for the KSC1008GTA?

The maximum collector-emitter voltage (VCEO) for the KSC1008GTA is 60 V.

What is the power dissipation of the KSC1008GTA transistor?

The KSC1008GTA has a power dissipation of 800 mW.

What package type is the KSC1008GTA supplied in?

The KSC1008GTA is supplied in a TO-92-3 package.

What is the operating temperature range for the KSC1008GTA?

The operating junction temperature for the KSC1008GTA is up to 150°C.

What is the DC current gain (hFE) of the KSC1008GTA?

The DC current gain (hFE) for the KSC1008GTA is a minimum of 40 and a maximum of 400 under specified conditions.

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