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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,504 pcs
|
2504 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector - Emitter Saturation Voltage | |
| Collector Current (@ IC = 10 mA, IB = 0) | |
| Collector Current (@ IC = 100 mA, IE = 0) | |
| Collector Current (@ IE = 10 mA, IC = 0) | |
| Collector Current (Maximum @ IB = 50 mA, VCE = 400 mV) | |
| Collector Current (Minimum/Typical/Maximum @ IC = 50 mA, VCE = 10 V) | |
| Collector Current (Minimum/Typical/Maximum @ VCE = 2 V) | |
| Collector Current (Unspecified condition) | |
| Collector Cut-Off Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product (Minimum/Typical @ VCE = 10 V, IC = 50 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) Classification | |
| DC Current Gain Hfe (Minimum/Maximum @ IC = 50 mA, VCE = 2 V) | |
| DC Current Gain Hfe (Minimum/Typical/Maximum @ VCE = 2 V) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSC1008CYTA is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a collector-emitter voltage of 60V and a collector current of 0.7A. The device features a TO92-3 package with formed leads suitable for through-hole mounting. Its electrical characteristics include a collector current of 700mA, collector-base voltage of 80V, and a collector-emitter voltage of 60V. The transistor has a DC current gain (hFE) ranging from 40 to 400, with a current gain bandwidth product of at least 30 MHz. It also has a power dissipation of 800mW and a junction temperature rating of 150°C. The device complies with RoHS standards and is lead-free. It is suitable for general-purpose switching and amplification in electronic circuits, especially where a compact through-hole package is preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V
TO92-3
150°C (TJ)
Yes, it is RoHS3 compliant