| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,690 pcs
|
2690 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB906YTU is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for low frequency power amplifier applications and features a low collector-emitter saturation voltage.
Key electrical specifications include a collector-emitter voltage of -60V, a continuous collector current of up to 3A, and a base current of 0.5A. The DC current gain (hFE) is a minimum of 60 at IC = -0.5A and VCE = -5V, with a classification range of 60-120 and 100-200. The collector-emitter saturation voltage (VCE(sat)) is a maximum of -1.7V at IC = -3A and IB = -0.3A. The current gain bandwidth product (fT) is 9MHz at VCE = -5V and IC = -0.5A.
This transistor has a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C. It can dissipate up to 20W when the case temperature is 25°C (TC=25°C) or 1W when the ambient temperature is 25°C (Ta=25°C).
The KSB906YTU is supplied in an I-PAK package (TO-251-3 Short Leads, IPak, TO-251AA) and is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -60V.
The maximum continuous collector current is 3A.
The KSB906YTU is supplied in an I-PAK package, specifically TO-251-3 Short Leads, IPak, TO-251AA.
The maximum operating junction temperature is 150°C.
The RoHS status is RoHS3 Compliant.