| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,220 pcs
|
4220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,170 pcs
|
1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The KSB834WYTM is a PNP Silicon Epitaxial Transistor manufactured by ON Semiconductor. It serves as a complement to the KSD880W and is suitable for low frequency power amplifier applications.
Key electrical characteristics include a collector-emitter voltage of -60V and a continuous collector current of up to 3A. The device offers a DC current gain (hFE) of 60 minimum at -0.5A and -5V, and 20 minimum at -3A and -5V. Its current gain bandwidth product (fT) is 9MHz at -0.5A and -5V.
The transistor is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. It has a maximum junction temperature of 150°C and a collector dissipation rating of 30W when the case temperature is 25°C, or 1.5W when the ambient temperature is 25°C.
This device is Pb-Free, indicating compliance with environmental standards. It is supplied in tape and reel packaging with 800 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
3 A
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
150°C (TJ)
Yes, it is RoHS3 Compliant.