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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base-Emitter On Voltage | |
| Collector Current (DC) | |
| Collector Current (Pulse) | |
| Collector Cut-Off Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Gain Bandwidth Product Ft (Typical @ VCE = -6 V, IC = -10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ VCE = -1 V, IC = -0.1 A) | |
| DC Current Gain Hfe (Minimum @ VCE = -1 V, IC = -1.0 A) | |
| Emitter Cut-off Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation Collector | |
| Saturation Voltage Collector Emitter (Maximum @ IC = -1.0 A, IB = -0.1 A) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB798GTF is a PNP Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for audio frequency power amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of -25V and a continuous collector current (IC) of -1A. The device offers a DC current gain (hFE) of at least 90 at -0.1A collector current and -1V VCE, and a minimum of 50 at -1.0A collector current and -1V VCE. The collector power dissipation (PC) is rated at 2W, and the junction temperature (TJ) can reach up to 150°C.
The transistor is housed in a TO-243AA package, also referred to as SOT-89-3, suitable for surface mounting. The operating temperature range is from -55°C to 150°C.
This transistor is suitable for various amplification and switching applications where a PNP type is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSB798GTF is -25V.
The maximum continuous collector current (IC) for the KSB798GTF is -1A.
The collector power dissipation (PC) for the KSB798GTF is 2W.
The KSB798GTF is available in a SOT-89-3 package.
The operating temperature range for the KSB798GTF is -55°C to 150°C.
The minimum DC Current Gain (hFE) of the KSB798GTF at 100mA and 1V is 90.
The current gain bandwidth product (fT) for the KSB798GTF is 110MHz.