| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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29,781 pcs
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29781 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSB772YS is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current of 3A. It offers a typical DC current gain (hFE) of 160 at 1A and 2V, with a saturation voltage (Vce(sat)) of 500mV at 200mA and 2A. The transistor operates at frequencies up to 80MHz.
Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the KSB772YS is suitable for applications requiring moderate power dissipation, rated at 1W. The operating junction temperature range is up to 150°C.
This transistor is compliant with RoHS3 standards and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSB772YS transistor has a maximum collector-emitter voltage rating of 30V.
The KSB772YS transistor can handle a maximum continuous collector current of 3A.
The KSB772YS transistor has a power dissipation rating of 1W.
The KSB772YS transistor can operate at junction temperatures up to 150°C.
The KSB772YS transistor is supplied in a TO-126-3 package.
The KSB772YS transistor is designed for through-hole mounting.