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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Output Capacitance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) Classification | |
| Frequency | |
| Leakage Current (Maximum @ VCB = -80 V, IE = 0) | |
| Leakage Current (Maximum @ VEB = -5 V, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Unspecified condition) | |
| Saturation Voltage (Maximum @ 300 mA, 3 A) | |
| Saturation Voltage (Maximum @ IC = -3 A, IB = -0.3 A) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| frequency (Unspecified condition) | |
| gain (Minimum @ 500 mA, 5 V) | |
| gain (Minimum @ VCE = -5 V, IC = -0.5 A) | |
| gain (Minimum @ VCE = -5 V, IC = -3 A) | |
| gain (Unspecified condition) | |
| voltage (Maximum @ VCE = -5 V, IC = -3 A) | |
| voltage (Minimum @ IE = -10 mA, IC = 0) | |
| voltage (Unspecified condition) |
The KSB596YTU from On Semiconductor is a PNP Epitaxial Silicon Transistor designed for power amplifier applications. This device offers a collector-emitter voltage of -80V and a continuous collector current of -4A, with a power dissipation of 30W at 25°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 40 at IC = -0.5A and VCE = -5V, and a current gain bandwidth product (fT) of 3MHz. The transistor is specified with a collector-emitter saturation voltage (VCE(sat)) of -1.7V maximum at IC = -3A and IB = -0.3A.
The KSB596YTU is packaged in a TO-220-3 through-hole mount configuration. It is a Pb-Free device, indicating compliance with environmental regulations. This transistor is a complement to the KSD526.
This component is suitable for various power amplification circuits where a robust PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the KSB596YTU is -4 A.
The KSB596YTU transistor has a collector-emitter voltage (VCEO) rating of -80 V.
The KSB596YTU transistor has a power dissipation (PC) of 30 W at 25°C.
The KSB596YTU has a junction temperature (TJ) operating range of up to 150°C.
The KSB596YTU transistor is supplied in a TO-220-3 package.
The minimum DC current gain (hFE) for the KSB596YTU at IC = -0.5A and VCE = -5V is 40.
The current gain bandwidth product (fT) for the KSB596YTU is 3 MHz.