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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor KSB546YTU is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-220-3 package.
Key electrical specifications include a maximum voltage rating of 150V and a continuous current capability of 2A. The transistor can dissipate up to 25W of power. Its DC current gain (hFE) is a minimum of 120 at 400mA and 10V, with a Vce saturation of 1V maximum at 50mA and 500mA.
Operating at frequencies up to 5MHz, the KSB546YTU has an operating temperature range of 150°C (TJ). The component is specified as RoHS3 compliant, with an MSL of 1 (Unlimited), and REACH unaffected.
This transistor is a reliable choice for applications requiring a general-purpose PNP switching or amplification function within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSB546YTU transistor has a voltage rating of 150V.
The KSB546YTU can handle a maximum continuous current of 2A.
The KSB546YTU transistor has a power dissipation of 25W.
The operating temperature for the KSB546YTU is 150°C (TJ).
The KSB546YTU is supplied in a TO-220-3 package.
The KSB546YTU transistor is designed for through-hole mounting.