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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage | |
| Collector Dissipation (TA = 25°C) | |
| Collector Dissipation (Tc=25°C) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 2 A, IB = 0.2 A) | |
| Collector Emitter Voltage Rating (Maximum) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Continuous Collector Current (Maximum) | |
| Current | |
| DC Current Gain (Minimum @ Vce=5 V, Ic=0.5 A) | |
| DC Current Gain (Typical @ VCE = -5 V, IC = -3 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Gain Bandwidth Product (Typical @ VCE = -5 V, IC = -0.5 A) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Package Code | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB1366GTU is a PNP epitaxial silicon transistor manufactured by On Semiconductor, suitable for low frequency power amplifier applications. It is a complement to the KSD2012 transistor.
Key electrical characteristics include a collector-emitter breakdown voltage of -60V and a continuous collector current of up to 3A. The DC current gain (hFE) is a minimum of 100 at 500mA and 5V, with a typical value of 20 at 3A and 5V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1V at 2A collector current and 200mA base current. The gain bandwidth product (fT) is typically 9MHz at -5V collector-emitter voltage and -0.5A collector current.
This transistor is housed in a TO-220-3 Full Pack package, designed for through-hole mounting. It has a maximum power dissipation of 2W at an ambient temperature of 25°C and 25W at a case temperature of 25°C. The operating junction temperature ranges from -55°C to 150°C, with a storage temperature range of -55°C to 150°C.
The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the KSB1366GTU is 3A.
The collector-emitter breakdown voltage of the KSB1366GTU is -60V.
The KSB1366GTU is supplied in a TO-220-3 Full Pack package.
The maximum operating junction temperature for the KSB1366GTU is 150°C.
The DC current gain (hFE) is a minimum of 100 at 500mA and 5V, and a typical value of 20 at 3A and 5V.
The KSB1366GTU is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the KSB1366GTU is 1 Unlimited.