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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,197 pcs
|
1197 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB1151YSTU from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is designed for through-hole mounting and comes in a TO-126-3 package.
This transistor offers a maximum collector-emitter voltage of 60V and can handle a continuous collector current of up to 5A. It has a power dissipation rating of 1.3W. The DC current gain (hFE) is a minimum of 160 at 2A and 1V, with a Vce saturation of 300mV maximum at 200mA and 2A.
The operating junction temperature for this device is up to 150°C. It is specified with RoHS3 compliance and Moisture Sensitivity Level 1 (MSL 1).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The KSB1151YSTU has a maximum collector-emitter voltage rating of 60V.
The KSB1151YSTU can handle a continuous collector current of up to 5A.
The power dissipation for the KSB1151YSTU is 1.3W.
The operating junction temperature for the KSB1151YSTU is up to 150°C.
The KSB1151YSTU is available in a TO-126-3 package.
The KSB1151YSTU is designed for through-hole mounting.