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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,970 pcs
|
4970 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB1097YTU is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This component is designed for through-hole mounting and comes in a TO-220F-3 package.
Key electrical characteristics include a maximum collector-emitter voltage of 60V and a maximum collector current of 7A. The DC current gain (hFE) is a minimum of 100 at 3A and 1V. Its Vce saturation is a maximum of 500mV at 500mA and 5A. The transistor has a power dissipation rating of 2W and an operating junction temperature up to 150°C.
This transistor is suitable for various general-purpose amplification and switching applications where a PNP type is required. Its through-hole mounting makes it convenient for breadboarding and traditional PCB assembly.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum continuous collector current is 7A.
The DC current gain (hFE) is a minimum of 100 at 3A and 1V.
The package type is TO-220-3 Full Pack, with the supplier device package being TO-220F-3.
The KSB1097YTU is mounted using the Through Hole method.
The operating junction temperature is up to 150°C.