KSB1017YTU The On Semiconductor KSB1017YTU is a PNP bipolar transistor designed for general-purpose applications. It features an 80V collector-emitter breakdown voltage and a 4A collector current rating.
Mfr Part #:

KSB1017YTU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor KSB1017YTU is a PNP bipolar transistor designed for general-purpose applications. It features an 80V collector-emitter breakdown voltage and a 4A collector current rating.
Total Stock: 2,677 pcs
$ Price Range: $0.99

KSB1017YTU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,900 pcs
1900 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
777 pcs
777 pcs On Request 1 On Request On Request On Request On Request On Request

KSB1017YTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSB1017YTU Description

Short technical summary and product information.

The KSB1017YTU from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 4A.

 

This transistor has a maximum power dissipation of 25W and a transition frequency of 9MHz. The saturation voltage (Vce Sat) is specified at a maximum of 1.7V at 300mA collector current and 3A base current. The minimum DC current gain (hFE) is 120 at 500mA collector current and 5V Vce.

 

Designed for through-hole mounting, the KSB1017YTU comes in a TO-220-3 Full Pack package, with the supplier device package specified as TO-220F-3. It operates at a maximum junction temperature of 150°C.

 

Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make the KSB1017YTU a robust component for power switching and amplification tasks.

KSB1017YTU Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: On Semiconductor KSB1017YTU PNP Bipolar Transistor
Subcategory: Bipolar (BJT) - Single

KSB1017YTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSB1017YTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSB1017YTU Features

  • 80V collector-emitter breakdown voltage.
  • 4A maximum continuous collector current.
  • 25W maximum power dissipation.
  • TO-220F-3 package for through-hole mounting.
  • RoHS3 compliant component.

KSB1017YTU Applications

  • Used in power switching circuits.
  • Suitable for general amplification tasks.
  • Component for voltage regulation circuits.
  • Applicable in DC-DC converters.

KSB1017YTU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSB1017YTU?

The maximum collector-emitter breakdown voltage is 80V.

What is the maximum continuous collector current?

The maximum continuous collector current is 4A.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the KSB1017YTU supplied in?

The KSB1017YTU is supplied in a TO-220F-3 package.

How is the KSB1017YTU mounted?

The KSB1017YTU is designed for through-hole mounting.

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