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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
777 pcs
|
777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB1017YTU from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 4A.
This transistor has a maximum power dissipation of 25W and a transition frequency of 9MHz. The saturation voltage (Vce Sat) is specified at a maximum of 1.7V at 300mA collector current and 3A base current. The minimum DC current gain (hFE) is 120 at 500mA collector current and 5V Vce.
Designed for through-hole mounting, the KSB1017YTU comes in a TO-220-3 Full Pack package, with the supplier device package specified as TO-220F-3. It operates at a maximum junction temperature of 150°C.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make the KSB1017YTU a robust component for power switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 80V.
The maximum continuous collector current is 4A.
The operating temperature range is up to 150°C (TJ).
The KSB1017YTU is supplied in a TO-220F-3 package.
The KSB1017YTU is designed for through-hole mounting.