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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,990 pcs
|
8990 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter ON Voltage (Vbe) (Typical/Maximum @ VCE = -5 V, IC = -0.5 A) | |
| Collector Current DC (Maximum) | |
| Collector Cut-Off Current | |
| Collector Emitter Voltage (Maximum) | |
| Collector Power Dissipation | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Vce) (Maximum @ Ib, Ic = 300 mA, 3 A) | |
| Collector-Emitter Saturation Voltage (Vce) (Typical/Maximum @ IC = -3 A, IB= -0.3 A) | |
| Current | |
| Current Gain Bandwidth Product (fT) (Maximum) | |
| Current Gain Bandwidth Product (fT) (Typical @ VCE = -5 V, IC = -0.5 A) | |
| DC Current Gain (hFE) (@ VCE = -5 V, IC = -0.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic, Vce = 500 mA, 5 V) | |
| DC Current Gain (hFE) (Minimum @ VCE = -5 V, IC = -3 A) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Pb-Free | |
| Power | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSB1015YTU from ON Semiconductor is a PNP epitaxial silicon transistor designed for low frequency power amplifier applications. It features a low collector-emitter saturation voltage, making it efficient for amplification tasks.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -3A. The DC current gain (hFE) ranges from 60 to 200 at -0.5A and -5V. The transistor also exhibits a current gain bandwidth product (fT) of 9MHz.
This device is supplied in a TO-220-3 Full Pack package, suitable for through-hole mounting. The maximum power dissipation is rated at 25W at a case temperature of 25°C. The operating junction temperature is 150°C, with storage temperatures ranging from -55°C to 150°C.
The KSB1015YTU is designated as Pb-Free, indicating compliance with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSB1015YTU is -60 V.
The continuous collector current (IC) rating for the KSB1015YTU is -3 A.
The KSB1015YTU is supplied in a TO-220-3 Full Pack package.
The operating junction temperature (TJ) for the KSB1015YTU is 150°C.
The KSB1015YTU is RoHS3 Compliant.