| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
8,990 pcs
|
8990 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The KSB1015YTU from ON Semiconductor is a PNP epitaxial silicon transistor designed for low frequency power amplifier applications. It features a low collector-emitter saturation voltage, making it efficient for amplification tasks.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -3A. The DC current gain (hFE) ranges from 60 to 200 at -0.5A and -5V. The transistor also exhibits a current gain bandwidth product (fT) of 9MHz.
This device is supplied in a TO-220-3 Full Pack package, suitable for through-hole mounting. The maximum power dissipation is rated at 25W at a case temperature of 25°C. The operating junction temperature is 150°C, with storage temperatures ranging from -55°C to 150°C.
The KSB1015YTU is designated as Pb-Free, indicating compliance with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSB1015YTU is -60 V.
The continuous collector current (IC) rating for the KSB1015YTU is -3 A.
The KSB1015YTU is supplied in a TO-220-3 Full Pack package.
The operating junction temperature (TJ) for the KSB1015YTU is 150°C.
The KSB1015YTU is RoHS3 Compliant.