| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,221,698 pcs
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1221698 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA992FBTA is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for audio frequency low-noise amplifier applications and is a complement to the KSC1845 transistor.
Key electrical specifications include a collector-emitter voltage of -120V, a collector current of -50mA, and a power dissipation of 500mW. The DC current gain (hFE) ranges from 300 to 600 at 1mA and -6V. The transistor also features a current gain bandwidth product of at least 50MHz.
This device is housed in a TO-92-3 package with formed leads, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C, with a storage temperature range of -55°C to 150°C.
The KSA992FBTA is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the KSA992FBTA is -120 V.
The maximum collector current for the KSA992FBTA is -50 mA.
The power dissipation of the KSA992FBTA transistor is 500 mW.
The operating junction temperature for the KSA992FBTA is 150°C.
The KSA992FBTA is supplied in a TO-92-3 package.
Yes, the KSA992FBTA is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the KSA992FBTA is 1.