| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,020 pcs
|
29020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor KSA992FATA is a PNP epitaxial silicon transistor suitable for audio frequency low-noise amplifier applications. It is the complement to the KSC1845 transistor.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -120V and a maximum collector current (IC) of -50mA. The device offers a DC current gain (hFE) ranging from 300 to 600 at IC = -1mA and VCE = -6V. Its current gain bandwidth product (fT) is a minimum of 50MHz at IC = -1mA and VCE = -6V.
The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 500mW at 25°C.
This device is Pb-Free, indicating compliance with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA992FATA is -120V.
The maximum collector current (IC) for the KSA992FATA is -50mA.
The KSA992FATA is supplied in a TO-92-3 package.
The junction temperature range for the KSA992FATA is -55°C to 150°C.
The DC current gain (hFE) for the KSA992FATA at IC = -1mA and VCE = -6V ranges from 300 to 600.
The current gain bandwidth product (fT) for the KSA992FATA is a minimum of 50MHz at IC = -1mA and VCE = -6V.