| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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211 pcs
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211 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA940TU from ON Semiconductor is a PNP epitaxial silicon transistor, serving as a power amplifier. It is designed with a collector-emitter voltage rating of 150V and a maximum collector current of 1.5A.
Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 140 at 500mA and 10V, and a gain bandwidth product (fT) of 4MHz at 500mA and 10V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 500mA and 50mA base current.
This device is housed in a TO-220-3LD package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 25W at 25°C case temperature.
The KSA940TU is a Pb-Free device, indicating compliance with environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA940TU is 150V.
The KSA940TU can handle a maximum continuous collector current of 1.5A.
The gain bandwidth product (fT) for the KSA940TU is 4MHz.
The KSA940TU operates within a junction temperature range of -55°C to 150°C.
The KSA940TU is supplied in a TO-220-3LD package.
The KSA940TU is RoHS3 Compliant.