| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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90,000 pcs
|
90000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA916YTA is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for applications such as audio power amplifiers and driver stages.
Key electrical characteristics include a collector-emitter breakdown voltage of -120V and a continuous collector current of 800mA. The transistor features a DC current gain (hFE) ranging from 60 to 240 depending on the test conditions. Its saturation voltage (VCE(sat)) is a maximum of -1V at 500mA collector current and 50mA base current. The gain bandwidth product (fT) is 120MHz.
This device is housed in a TO-92-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C, with a power dissipation of 900mW by junction-to-ambient thermal resistance.
The KSA916YTA is a complement to the KSC2316 transistor, offering design flexibility in complementary push-pull stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-120V
800mA
TO-92-3
150°C (TJ)
100
120MHz