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KSA916YBU The ON Semiconductor KSA916YBU is a PNP bipolar junction transistor designed for audio and driver stage amplification. It offers a 120V collector-emitter voltage and 800mA collector current.
Mfr Part #:

KSA916YBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor KSA916YBU is a PNP bipolar junction transistor designed for audio and driver stage amplification. It offers a 120V collector-emitter voltage and 800mA collector current.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

KSA916YBU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
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KSA916YBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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KSA916YBU Description

Short technical summary and product information.

The KSA916YBU from ON Semiconductor is a PNP epitaxial silicon transistor suitable for audio power amplifier and driver stage amplifier applications. It features a maximum collector current of 800mA and a collector-emitter voltage of 120V.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 80 to 240 at 100mA and 5V, and a gain bandwidth product (fT) of 120MHz at 100mA and 5V. The saturation voltage (VCE(sat)) is a maximum of 1V at 500mA collector current and 50mA base current.

 

This transistor is housed in a TO-92-3 long body package and is designed for through-hole mounting. It has a maximum power dissipation of 900mW (RθJA) and operates at junction temperatures up to 150°C. The thermal resistance junction-to-ambient is 130°C/W, and junction-to-case is 41°C/W.

KSA916YBU Quick Information

Product Type: PNP Transistor
Canonical Name: KSA916YBU PNP Epitaxial Silicon Transistor
Subcategory: Single

KSA916YBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSA916YBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA916YBU Features

  • PNP epitaxial silicon transistor.
  • 120V collector-emitter breakdown voltage.
  • 800mA maximum collector current.
  • 120MHz gain bandwidth product.
  • TO-92 through-hole package.

KSA916YBU Applications

  • Suitable for audio power amplifier circuits.
  • Used in driver stage amplifier applications.
  • Ideal for switching and amplification in electronic devices.
  • Applicable in high-voltage switching applications.
  • Suitable for general-purpose transistor switching tasks.

KSA916YBU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the KSA916YBU transistor?

The maximum collector current is 800mA.

What is the collector-emitter breakdown voltage of the KSA916YBU?

The collector-emitter breakdown voltage is 120V.

What is the operating temperature range for the KSA916YBU?

The operating junction temperature is up to 150°C.

What package type is the KSA916YBU supplied in?

The KSA916YBU is supplied in a TO-92-3 long body package.

What is the gain bandwidth product of the KSA916YBU?

The gain bandwidth product (fT) is 120MHz.

What is the saturation voltage for the KSA916YBU?

The collector-emitter saturation voltage is a maximum of 1V.

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