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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1 mA, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = -1 mA, IC = 0) | |
| Collector Cut-Off Current | |
| Current | |
| Current Gain Bandwidth Product (fT) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (Maximum @ by RθJA) | |
| Power Dissipation (Maximum @ by RθJC) | |
| Power Dissipation (Maximum) | |
| Saturation Voltage (Maximum @ IB = -50 mA, IC = -500 mA) | |
| Saturation Voltage (Maximum @ IC = -500 mA, IB = -50 mA) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance (Nominal @ RθJA) | |
| Thermal Resistance (Nominal @ RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| gain (Minimum @ IC = -100 mA, VCE = -5 V) | |
| gain (Minimum @ VCE = -5 V, IC = -10 mA) | |
| gain (Minimum/Maximum @ VCE = -5 V, IC = -100 mA) |
The KSA916YBU from ON Semiconductor is a PNP epitaxial silicon transistor suitable for audio power amplifier and driver stage amplifier applications. It features a maximum collector current of 800mA and a collector-emitter voltage of 120V.
Key electrical characteristics include a DC current gain (hFE) ranging from 80 to 240 at 100mA and 5V, and a gain bandwidth product (fT) of 120MHz at 100mA and 5V. The saturation voltage (VCE(sat)) is a maximum of 1V at 500mA collector current and 50mA base current.
This transistor is housed in a TO-92-3 long body package and is designed for through-hole mounting. It has a maximum power dissipation of 900mW (RθJA) and operates at junction temperatures up to 150°C. The thermal resistance junction-to-ambient is 130°C/W, and junction-to-case is 41°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 800mA.
The collector-emitter breakdown voltage is 120V.
The operating junction temperature is up to 150°C.
The KSA916YBU is supplied in a TO-92-3 long body package.
The gain bandwidth product (fT) is 120MHz.
The collector-emitter saturation voltage is a maximum of 1V.