KSA916OBU The KSA916OBU is a PNP bipolar junction transistor with a voltage rating of 120V and a collector current of 0.8A, housed in a TO92-3 package.
Mfr Part #:

KSA916OBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSA916OBU is a PNP bipolar junction transistor with a voltage rating of 120V and a collector current of 0.8A, housed in a TO92-3 package.
Total Stock: 4,500 pcs
$ Price Range: $0.99

KSA916OBU Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,500 pcs
4500 pcs On Request 1 On Request On Request On Request On Request On Request

KSA916OBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector - Emitter Saturation Voltage
Collector Cut-Off Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Current
Current Gain DC (Minimum @ VCE = -5 V, IC = -10 mA)
Current Gain DC (Minimum @ VCE = -5 V, IC = -100 mA)
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Industrial Grade
Junction Temperature
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Output Capacitance
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSA916OBU Description

Short technical summary and product information.

The KSA916OBU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a collector-emitter voltage of 120V and a maximum collector current of 0.8A. The device features a TO92-3 package, suitable for through-hole mounting on printed circuit boards. Its electrical characteristics include a collector-emitter breakdown voltage of at least -120V, a collector current limit of 0.8A, and a DC current gain minimum of 60 at specified test conditions. The transistor has a collector-base voltage of -120V, an emitter-base voltage of -5V, and a collector-emitter saturation voltage of -1V. It can operate within a temperature range from -55°C to 150°C, with a maximum junction temperature of 150°C. The device's output capacitance is approximately 40pF, and it dissipates up to 900mW of power. It is suitable for use in various electronic circuits including switching, amplification, and signal processing where high voltage and moderate current are required.

KSA916OBU Quick Information

Product Type: Transistor - Bipolar (BJT) - Single
Canonical Name: KSA916OBU

KSA916OBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSA916OBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA916OBU Features

  • Rated for 120V collector-emitter voltage
  • Maximum collector current of 0.8A
  • TO92-3 through-hole package
  • DC current gain minimum of 60
  • Maximum power dissipation of 900mW

KSA916OBU Applications

  • Suitable for high-voltage switching circuits
  • Used in amplification applications
  • Ideal for signal processing tasks
  • Mounts easily in through-hole PCB designs

KSA916OBU FAQs

3 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the KSA916OBU?

-120V

What package does the KSA916OBU come in?

TO92-3

What is the maximum operating temperature of the KSA916OBU?

150°C

Home
Account

Categories