| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 0206+ | On Request | On Request | |
|
21,817 pcs
|
21817 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSA708YTA is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for low frequency amplifier and medium speed switching applications. This transistor offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 700mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 50mA and 2V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 700mV at 50mA collector current and 50mA base current. The current gain bandwidth product (fT) is 50MHz.
The KSA708YTA is housed in a TO-92-3 package, suitable for through-hole mounting. It has a power dissipation rating of 800mW and an operating temperature range of -55°C to 150°C.
This transistor is a complement to the KSC1008. Its specifications make it suitable for various general-purpose amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 60V.
It comes in a TO-226-3, TO-92-3 (TO-226AA) formed leads package.
-80 V.
8V.
150°C.