KSA708YTA The KSA708YTA is a PNP bipolar junction transistor from On Semiconductor, designed for low frequency amplification and medium speed switching. It features a 60V collector-emitter voltage and 700mA collector current.
Mfr Part #:

KSA708YTA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSA708YTA is a PNP bipolar junction transistor from On Semiconductor, designed for low frequency amplification and medium speed switching. It features a 60V collector-emitter voltage and 700mA collector current.
Total Stock: 51,817 pcs
$ Price Range: $0.99

KSA708YTA Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request 0206+ On Request On Request
Non-Authorised Inventory information
21,817 pcs
21817 pcs On Request 1 On Request On Request On Request On Request On Request

KSA708YTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
IC (Nominal/Maximum)
ICBO (Maximum @ VCB = -60 V, IE = 0)
ICBO (Maximum)
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
PC (Nominal @ TA = 25 °C)
Power
Storage Temperature
Supplier Device Package
Transistor Type
VCE(sat) (Maximum @ IC =500 mA, IB =50 mA)
VCEO (Minimum @ IC=10 mA, IB=0)
VEBO (Nominal/Maximum)
Vce Saturation (Max) @ Ib, Ic
Voltage
fT (Nominal)
fT (Typical @ VCE=-10 V, IC=-50 mA)
hFE (Minimum/Maximum @ VCE = -2 V, IC = -50 mA)

KSA708YTA Description

Short technical summary and product information.

The KSA708YTA is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for low frequency amplifier and medium speed switching applications. This transistor offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 700mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 50mA and 2V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 700mV at 50mA collector current and 50mA base current. The current gain bandwidth product (fT) is 50MHz.

 

The KSA708YTA is housed in a TO-92-3 package, suitable for through-hole mounting. It has a power dissipation rating of 800mW and an operating temperature range of -55°C to 150°C.

 

This transistor is a complement to the KSC1008. Its specifications make it suitable for various general-purpose amplification tasks in electronic circuits.

KSA708YTA Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: KSA708YTA PNP Epitaxial Silicon Transistor
Subcategory: PNP

KSA708YTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSA708YTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA708YTA Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 700mA continuous collector current.
  • 800mW power dissipation.
  • TO-92-3 through-hole package.

KSA708YTA Applications

  • Suitable for switching applications
  • Used in amplification circuits
  • Ideal for high-frequency circuits
  • Designed for general-purpose use

KSA708YTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the KSA708YTA?

The collector-emitter voltage (VCEO) is 60V.

What package does the KSA708YTA come in?

It comes in a TO-226-3, TO-92-3 (TO-226AA) formed leads package.

What is the maximum collector-base voltage for this transistor?

-80 V.

What is the maximum emitter-base voltage?

8V.

What is the junction temperature limit?

150°C.

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