KSA708YBU The KSA708YBU is a PNP epitaxial silicon transistor from On Semiconductor designed for low frequency amplification and medium speed switching. It comes in a TO-92-3 package.
Mfr Part #:

KSA708YBU

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSA708YBU is a PNP epitaxial silicon transistor from On Semiconductor designed for low frequency amplification and medium speed switching. It comes in a TO-92-3 package.
✓ Total Stock: 105,291 pcs
$ Price Range: $0.99

KSA708YBU Available from 3 distributors

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KSA708YBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSA708YBU Description

Short technical summary and product information.

The KSA708YBU is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for applications requiring low frequency amplification and medium speed switching.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -700mA. The device offers a maximum power dissipation of 800mW at 25°C and a junction temperature up to 150°C.

 

This transistor features a DC current gain (hFE) ranging from 120 to 240 at 50mA and 2V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 700mV at 50mA and 500mA, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 1.1V under the same conditions. The current gain bandwidth product (fT) is 50MHz.

 

The KSA708YBU is supplied in a TO-92-3 through-hole package, making it suitable for standard PCB mounting. It is a complement to the KSC1008 transistor.

KSA708YBU Quick Information

Product Type: PNP Transistor
Canonical Name: KSA708YBU PNP Epitaxial Silicon Transistor
Subcategory: PNP

KSA708YBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSA708YBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA708YBU Features

  • PNP epitaxial silicon transistor.
  • Rated for 60V collector-emitter voltage.
  • Handles up to 700mA collector current.
  • 800mW maximum power dissipation.
  • TO-92-3 through-hole package.

KSA708YBU Applications

  • Suitable for low frequency amplifier circuits.
  • Used in medium speed switching applications.
  • Ideal for transistor switching in electronic devices.
  • Applicable in signal amplification systems.
  • Suitable for general purpose switching and amplification.

KSA708YBU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the KSA708YBU transistor?

The collector-emitter voltage (VCEO) for the KSA708YBU is -60 V.

What is the maximum continuous collector current for the KSA708YBU?

The KSA708YBU can handle a maximum continuous collector current (IC) of -700 mA.

What is the power dissipation of the KSA708YBU transistor?

The KSA708YBU has a maximum power dissipation of 800 mW.

What is the operating junction temperature for the KSA708YBU?

The operating junction temperature (TJ) for the KSA708YBU is 150°C.

What package type is the KSA708YBU transistor supplied in?

The KSA708YBU is supplied in a TO-92-3 package.

What is the DC current gain (hFE) of the KSA708YBU?

The DC current gain (hFE) of the KSA708YBU is a minimum of 120 at 50mA and 2V.

What is the current gain bandwidth product (fT) for the KSA708YBU?

The current gain bandwidth product (fT) for the KSA708YBU is typically 50 MHz.

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