| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85,701 pcs
|
85701 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,570 pcs
|
8570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA708YBU is a PNP epitaxial silicon transistor manufactured by On Semiconductor. It is designed for applications requiring low frequency amplification and medium speed switching.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -700mA. The device offers a maximum power dissipation of 800mW at 25°C and a junction temperature up to 150°C.
This transistor features a DC current gain (hFE) ranging from 120 to 240 at 50mA and 2V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 700mV at 50mA and 500mA, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 1.1V under the same conditions. The current gain bandwidth product (fT) is 50MHz.
The KSA708YBU is supplied in a TO-92-3 through-hole package, making it suitable for standard PCB mounting. It is a complement to the KSC1008 transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the KSA708YBU is -60 V.
The KSA708YBU can handle a maximum continuous collector current (IC) of -700 mA.
The KSA708YBU has a maximum power dissipation of 800 mW.
The operating junction temperature (TJ) for the KSA708YBU is 150°C.
The KSA708YBU is supplied in a TO-92-3 package.
The DC current gain (hFE) of the KSA708YBU is a minimum of 120 at 50mA and 2V.
The current gain bandwidth product (fT) for the KSA708YBU is typically 50 MHz.