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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,977 pcs
|
2977 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Breakdown Voltage (Minimum @ IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 0) | |
| Breakdown Voltage (Minimum @ IE = 0) | |
| Collector Cut-Off Current | |
| Collector Emitter Saturation Voltage (@ IC = -500 mA, IB = -50 mA) | |
| Continuous Collector Current (Maximum) | |
| Current | |
| Current Gain Bandwidth Product (Typical @ VCE = -10 V, IC = -50 mA) | |
| DC Current Gain (@ VCE = -2 V, IC = -50 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Maximum | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (Maximum) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSA708CYTA is a PNP Epitaxial Silicon Transistor manufactured by ON Semiconductor. It is suitable for low frequency amplification and medium speed switching applications. This transistor features a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of up to 700mA. The power dissipation (PC) is rated at 800mW.
Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 240 at 50mA and 2V, and a current gain bandwidth product (fT) of 50MHz. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 700mV at 50mA and 500mA, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 1.1V at the same conditions.
The KSA708CYTA is housed in a TO-92-3 package and is designed for through-hole mounting. The operating junction temperature (TJ) is 150°C, with a storage temperature range from -55°C to +150°C.
This device is a complement to the KSC1008 transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the KSA708CYTA is 700mA.
The KSA708CYTA transistor has a power dissipation of 800mW.
The operating junction temperature for the KSA708CYTA is 150°C.
The KSA708CYTA transistor is supplied in a TO-92-3 package.
The DC current gain (hFE) of the KSA708CYTA transistor ranges from 120 to 240.
The current gain bandwidth product (fT) for the KSA708CYTA transistor is 50MHz.