| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,677 pcs
|
1677 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA473YTU is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This component is designed for through-hole mounting and comes in a TO-220-3 package.
Key electrical characteristics include a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 3A. It offers a power dissipation of up to 10W and a transition frequency of 100MHz. The minimum DC current gain (hFE) is rated at 120 at 500mA and 2V, with a Vce saturation of 800mV maximum at 200mA and 2A.
This transistor operates at temperatures up to 150°C (TJ). It is specified with a collector cutoff current of 1µA (ICBO) maximum.
The KSA473YTU is suitable for various general-purpose amplification and switching applications where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The maximum continuous collector current is 3A.
The operating temperature range is up to 150°C (TJ).
The KSA473YTU is supplied in a TO-220-3 package.
The transition frequency is 100MHz.
The minimum DC current gain (hFE) is 120 at 500mA and 2V.