| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA1381ESTU is a PNP Epitaxial Silicon Transistor manufactured by On Semiconductor. It is designed for high voltage applications, featuring a collector-emitter breakdown voltage (BVCEO) of -300 V and a continuous collector current (IC) of -100 mA. This transistor operates with a high frequency transition of 150 MHz and has a power dissipation capability of up to 7 W at 25°C.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 200 at 10mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of -0.6 V maximum at 2mA and 20mA. The reverse transfer capacitance (Cre) is a low 2.3 pF at 30V.
This device is housed in a TO-126-3 package and is suitable for through-hole mounting. It is designed for applications such as audio and voltage amplifiers, current sources, CRT displays, and video output stages. The transistor is Pb-Free.
Absolute maximum ratings include a collector-base voltage (BVCBO) of -300 V and an emitter-base voltage (BVEBO) of -5 V. The operating temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (BVCEO) for the KSA1381ESTU is -300 V.
The continuous collector current (IC) rating for the KSA1381ESTU is -100 mA.
The transition frequency (fT) of the KSA1381ESTU is 150 MHz.
The operating temperature range for the KSA1381ESTU is -55°C to +150°C.
The KSA1381ESTU is available in a TO-126-3 package.
The KSA1381ESTU is RoHS3 Compliant.