| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The KSA1304YTU is a PNP Epitaxial Silicon Transistor manufactured by On Semiconductor. It is designed for vertical output and power amplifier applications.
Key electrical specifications include a collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 1.5A. The device can dissipate up to 20W of power at 25°C case temperature. The DC current gain (hFE) ranges from 40 to 140 at a collector current of 500mA and a collector-emitter voltage of 10V.
This transistor features a TO-220F-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to 150°C. It is noted as a complement to the KSC3296 transistor.
Applications include power amplification and general vertical output stages where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA1304YTU is 150V.
The KSA1304YTU has a continuous collector current rating of 1.5A.
The KSA1304YTU can dissipate up to 20W of power at a case temperature of 25°C.
The operating junction temperature for the KSA1304YTU is up to 150°C.
The KSA1304YTU is supplied in a TO-220F-3 package.