| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,000 pcs
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14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA1281YTA from ON Semiconductor is a PNP epitaxial silicon transistor suitable for audio power amplifier applications, including 3W output stages. It is housed in a TO-92 package and offers a maximum collector current of 2A and a collector-emitter voltage of 50V.
Key electrical characteristics include a DC current gain (hFE) of 120-240 at 500mA and 2V, and a transition frequency (fT) of 100MHz. The transistor has a maximum power dissipation of 1W at 25°C and an operating temperature range up to 150°C.
This through-hole mounted component is ideal for designs requiring a reliable PNP transistor for amplification tasks. Its specifications make it a suitable choice for various audio circuits and general-purpose amplification needs where PNP characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The maximum collector current is 2A.
The maximum power dissipation is 1W.
The operating temperature range is -55°C to +150°C.
The KSA1281YTA is supplied in a TO-92-3 package.
The minimum DC current gain (hFE) is 120 at 500mA and 2V.
The transition frequency is 100MHz.