| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43,524 pcs
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43524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA1156OSTU is a PNP Silicon Transistor manufactured by On Semiconductor. This component is designed for high voltage switching applications, including low power switching regulators and DC-DC converters.
Key electrical characteristics include a high breakdown voltage of 400V (VCEO(sus) and VCBO), a maximum collector current of 0.5A (DC) and 1A (pulse), and a collector dissipation of 1W at 25°C ambient temperature or 10W at 25°C case temperature. The DC current gain (hFE) ranges from 30 to 200 at a collector current of 100mA and VCE of -5V. Saturation voltage (VCE(sat)) is a maximum of 1V at 100mA collector current and 10mA base current.
This transistor is supplied in a TO-126-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C. The device is Pb-Free compliant.
Applications for the KSA1156OSTU include high voltage switching, low power switching regulators, and DC-DC converters, leveraging its high breakdown voltage and fast switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) is -400V.
The maximum DC collector current is 0.5A.
The KSA1156OSTU is available in a TO-126-3 package.
The operating junction temperature is 150°C.
Yes, the KSA1156OSTU is RoHS3 Compliant.