KSA1156OSTU The KSA1156OSTU is a PNP Silicon Transistor from On Semiconductor. It features a high breakdown voltage of 400V and a collector current of 0.5A, housed in a TO-126-3 package.
Mfr Part #:

KSA1156OSTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSA1156OSTU is a PNP Silicon Transistor from On Semiconductor. It features a high breakdown voltage of 400V and a collector current of 0.5A, housed in a TO-126-3 package.
✓ Total Stock: 43,524 pcs
$ Price Range: $0.99

KSA1156OSTU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
43,524 pcs
43524 pcs On Request 1 On Request On Request On Request On Request On Request

KSA1156OSTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

KSA1156OSTU Description

Short technical summary and product information.

The KSA1156OSTU is a PNP Silicon Transistor manufactured by On Semiconductor. This component is designed for high voltage switching applications, including low power switching regulators and DC-DC converters.

 

Key electrical characteristics include a high breakdown voltage of 400V (VCEO(sus) and VCBO), a maximum collector current of 0.5A (DC) and 1A (pulse), and a collector dissipation of 1W at 25°C ambient temperature or 10W at 25°C case temperature. The DC current gain (hFE) ranges from 30 to 200 at a collector current of 100mA and VCE of -5V. Saturation voltage (VCE(sat)) is a maximum of 1V at 100mA collector current and 10mA base current.

 

This transistor is supplied in a TO-126-3 package, suitable for through-hole mounting. The operating junction temperature is rated up to 150°C. The device is Pb-Free compliant.

 

Applications for the KSA1156OSTU include high voltage switching, low power switching regulators, and DC-DC converters, leveraging its high breakdown voltage and fast switching characteristics.

KSA1156OSTU Quick Information

Product Type: PNP Silicon Transistor
Canonical Name: KSA1156OSTU PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

KSA1156OSTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSA1156OSTU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA1156OSTU Features

  • High breakdown voltage of 400V.
  • Suitable for high voltage switching.
  • 0.5A maximum DC collector current.
  • TO-126-3 through-hole package.
  • Pb-Free device.

KSA1156OSTU Applications

  • Suitable for high voltage switching applications.
  • Used in low power switching regulators.
  • Ideal for DC-DC converter circuits.
  • Applicable in high-speed switching circuits.
  • Suitable for high voltage, high speed transistor designs.

KSA1156OSTU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage for the KSA1156OSTU?

The collector-emitter sustaining voltage (VCEO(sus)) is -400V.

What is the maximum collector current for the KSA1156OSTU?

The maximum DC collector current is 0.5A.

What package type is the KSA1156OSTU available in?

The KSA1156OSTU is available in a TO-126-3 package.

What is the operating junction temperature for this transistor?

The operating junction temperature is 150°C.

Is the KSA1156OSTU RoHS compliant?

Yes, the KSA1156OSTU is RoHS3 Compliant.

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