| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA1156OSTSTU from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage (VCEO) of 400V and can handle a continuous collector current (IC) of up to 500mA. The transistor has a power dissipation rating of 1W and a DC current gain (hFE) of 60 at 100mA and 5V.
This component is housed in a TO-126-3 package, designed for through-hole mounting. The saturation voltage (Vce(sat)) is a maximum of 1V at 10mA collector current and 100mA base current. The operating temperature range extends up to 150°C (TJ).
Key electrical characteristics include a collector cutoff current (ICEO) of 100uA. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. This transistor is a reliable choice for applications requiring moderate voltage and current handling capabilities in a through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 400V.
The continuous collector current (IC) is 500mA.
The power dissipation (Pd) is 1W.
The DC current gain (hFE) is a minimum of 60 at 100mA and 5V.
The package type is TO-126-3.
It is designed for through-hole mounting.
The operating temperature is up to 150°C (TJ).