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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,000 pcs
|
22000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Failure Rate | |
| Frequency | |
| Lead Style | |
| Maximum Operating Temperature | |
| Minimum Operating Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor KSA1015GRTA is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It offers a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 150mA. The device has a power dissipation (Pd) rating of 400mW and a gain-bandwidth product (fT) of 80MHz.
This transistor is housed in a TO-92-3 package, designed for through-hole mounting. It operates within a temperature range of -65°C to +125°C. The KSA1015GRTA has a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V Vce, with a saturation voltage (Vce Sat) of 300mV maximum at 10mA Ic and 100mA Ib.
Key electrical characteristics include a collector-base voltage (VCBO) of 50V and an emitter-base voltage (VEBO) of -5V. The KSA1015GRTA series is manufactured by ON Semiconductor and is available in an ammo pack packaging format.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the KSA1015GRTA is 50V.
The continuous collector current (Ic) rating for the KSA1015GRTA is 150mA.
The power dissipation (Pd) for the KSA1015GRTA is 400mW.
The gain-bandwidth product (fT) of the KSA1015GRTA is 80MHz.
The minimum DC current gain (hFE) is 200 at 2mA collector current and 6V Vce.
The KSA1015GRTA is a PNP bipolar transistor.
The operating temperature range is -65°C to +125°C.