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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
169,868 pcs
|
169868 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
74,615 pcs
|
74615 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Collector Current (Maximum) | |
| Collector Cut-Off Current | |
| Collector Emitter Voltage (Maximum) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Vce Sat) | |
| Collector-Emitter Saturation Voltage (Vce sat) @ Ib, Ic | |
| Current | |
| Current Gain Bandwidth Product (fT) (Minimum/Typical @ VCE = -5 V, IC = -200 mA) | |
| Current Gain Bandwidth Product (fT) (Typical) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE = -5 V, IC = -200 mA) | |
| DC Current Gain (hFE) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSA1013YTA is a PNP Epitaxial Silicon Transistor manufactured by On Semiconductor. This component is designed for applications such as Color TV Audio Output and Color TV Vertical Deflection Output.
Key electrical characteristics include a collector-emitter voltage of up to 160V and a continuous collector current of 1A. The DC current gain (hFE) ranges from 60 to 320 under specific test conditions (VCE = -5V, IC = -200mA). The transistor features a current gain bandwidth product (fT) of 50MHz and an output capacitance (Cob) of 35pF at 1MHz.
The device operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 900mW. It is housed in a TO-92-3 package, suitable for through-hole mounting.
This transistor is specified with a collector-emitter saturation voltage (Vce sat) of -1.5V maximum at IC = -500mA and IB = -50mA, and a base-emitter on voltage (Vbe on) between -0.45V and -0.75V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA1013YTA is 160V.
The KSA1013YTA transistor has a continuous collector current rating of 1A.
The typical current gain bandwidth product (fT) for the KSA1013YTA is 50MHz.
The KSA1013YTA is available in a TO-92-3 package.
The maximum operating junction temperature (TJ) for the KSA1013YTA is 150°C.
The power dissipation rating of the KSA1013YTA transistor is 900mW.