KSA1013OBU The ON Semiconductor KSA1013OBU is a PNP BJT transistor designed for through-hole mounting. It offers a 160V collector-emitter voltage and a 1A current rating.
Mfr Part #:

KSA1013OBU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor KSA1013OBU is a PNP BJT transistor designed for through-hole mounting. It offers a 160V collector-emitter voltage and a 1A current rating.
Total Stock: 26,300 pcs
$ Price Range: $0.99

KSA1013OBU Available from 1 distributor

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KSA1013OBU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Maximum)
DC Current Gain (Minimum)
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Rated Voltage
Frequency
Gain-Bandwidth Product
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Operating Voltage (Maximum)
Package Quantity
Power
Power Dissipation (Maximum)
Reverse Voltage (Maximum)
Saturation Voltage (Maximum)
Supplier Device Package
Transistor Type
Transition Frequency (Minimum)
Vce Saturation (Max) @ Ib, Ic
Voltage

KSA1013OBU Description

Short technical summary and product information.

The ON Semiconductor KSA1013OBU is a PNP Epitaxial Silicon Transistor designed for through-hole mounting in a TO-226-3 package. This component features a maximum collector-emitter voltage of 160V and a maximum collector current of 1A.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 50MHz. The transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The collector-emitter saturation voltage is specified at a maximum of 1.5V.

 

This RoHS compliant component is supplied in bulk packaging. Its specifications make it suitable for various general-purpose amplification and switching applications where a PNP transistor with these voltage and current ratings is required.

KSA1013OBU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: PNP Epitaxial Silicon Transistor
Subcategory: PNP

KSA1013OBU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

KSA1013OBU Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSA1013OBU Features

  • PNP BJT transistor for through-hole mounting.
  • 160V collector-emitter voltage rating.
  • 1A maximum collector current.
  • 50MHz transition frequency.
  • Wide operating temperature range.

KSA1013OBU Applications

  • Suitable for high-voltage switching circuits
  • Used in power control and motor drivers
  • Ideal for audio amplification applications
  • Designed for through-hole PCB mounting

KSA1013OBU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the KSA1013OBU?

The maximum collector-emitter voltage (VCEO) for the KSA1013OBU is 160V.

What is the maximum continuous collector current?

The maximum continuous collector current is 1A.

What is the transition frequency of the KSA1013OBU?

The transition frequency (fT) is 50MHz.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the KSA1013OBU supplied in?

The KSA1013OBU is supplied in a TO-226-3, TO-92-3 Long Body package.

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