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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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26,300 pcs
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26300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor KSA1013OBU is a PNP Epitaxial Silicon Transistor designed for through-hole mounting in a TO-226-3 package. This component features a maximum collector-emitter voltage of 160V and a maximum collector current of 1A.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 50MHz. The transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The collector-emitter saturation voltage is specified at a maximum of 1.5V.
This RoHS compliant component is supplied in bulk packaging. Its specifications make it suitable for various general-purpose amplification and switching applications where a PNP transistor with these voltage and current ratings is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA1013OBU is 160V.
The maximum continuous collector current is 1A.
The transition frequency (fT) is 50MHz.
The operating temperature range is -55°C to 150°C.
The KSA1013OBU is supplied in a TO-226-3, TO-92-3 Long Body package.