| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSA1010YTU from ON Semiconductor is a PNP Epitaxial Silicon Transistor engineered for high-speed and high-voltage switching applications, including industrial use. This device offers a robust set of electrical characteristics, including a collector-emitter voltage of -100V and a continuous collector current of -7A.
Key electrical parameters include a maximum collector dissipation of 40W at 25°C (TC) and 1.5W at 25°C (TA). The transistor exhibits a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of -0.6V at specified currents. Its switching characteristics are defined by turn-on, storage, and fall times, all within microseconds.
The KSA1010YTU is housed in a TO-220-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ), ensuring reliability in demanding environments. This transistor is a complement to the KSC2334.
This component is suitable for various industrial applications requiring efficient and reliable switching. Its specifications make it a viable option for power supply circuits, motor control, and other high-voltage switching tasks where PNP transistors are preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA1010YTU is -100V.
The KSA1010YTU has a continuous collector current rating of 7A.
The KSA1010YTU is supplied in a TO-220-3 package.
The operating temperature range for the KSA1010YTU is -55°C to 150°C.
The minimum DC Current Gain (hFE) of the KSA1010YTU at IC = -3A and VCE = -5V is 40.
The collector-emitter saturation voltage (VCE(sat)) for the KSA1010YTU is a maximum of -0.6V at IB = -0.5A and IC = -5A.