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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Collector Current (Pulse) | |
| Collector Current DC (Maximum) | |
| Collector Cutoff Current (Maximum @ VCE = -100 V, RBE = 51 Ω, TC = 125 °C) | |
| Collector Cutoff Current (Maximum @ VCE = -100 V, VBE(off) = 1.5 V) | |
| Collector Cutoff Current (Maximum @ VCE = -100 V, VBE(off) = 1.5 V, TC = 125 °C) | |
| Collector Cutoff Current (Maximum @ Vcb=100 V, Ie=0) | |
| Collector Dissipation (TA) | |
| Collector Dissipation (TC) | |
| Collector Emitter Voltage (Maximum) | |
| Collector Emitter Voltage (Minimum @ VCEO(sus) | |
| Collector-Base Voltage (Maximum) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = 5 A, IB = 0.5 A) | |
| Collector-Emitter Saturation Voltage (Maximum) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ VCE = -5 V, IC = -0.5 A) | |
| DC Current Gain Hfe (Minimum @ VCE = -5 V, IC = -5 A) | |
| DC Current Gain Hfe (Minimum/Maximum) | |
| DC Current Gain Hfe (Minimum/Typical @ VCE = -5 V, IC = -3 A) | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage (Maximum) | |
| Fall Time | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSA1010YTU from ON Semiconductor is a PNP Epitaxial Silicon Transistor engineered for high-speed and high-voltage switching applications, including industrial use. This device offers a robust set of electrical characteristics, including a collector-emitter voltage of -100V and a continuous collector current of -7A.
Key electrical parameters include a maximum collector dissipation of 40W at 25°C (TC) and 1.5W at 25°C (TA). The transistor exhibits a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of -0.6V at specified currents. Its switching characteristics are defined by turn-on, storage, and fall times, all within microseconds.
The KSA1010YTU is housed in a TO-220-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ), ensuring reliability in demanding environments. This transistor is a complement to the KSC2334.
This component is suitable for various industrial applications requiring efficient and reliable switching. Its specifications make it a viable option for power supply circuits, motor control, and other high-voltage switching tasks where PNP transistors are preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the KSA1010YTU is -100V.
The KSA1010YTU has a continuous collector current rating of 7A.
The KSA1010YTU is supplied in a TO-220-3 package.
The operating temperature range for the KSA1010YTU is -55°C to 150°C.
The minimum DC Current Gain (hFE) of the KSA1010YTU at IC = -3A and VCE = -5V is 40.
The collector-emitter saturation voltage (VCE(sat)) for the KSA1010YTU is a maximum of -0.6V at IB = -0.5A and IC = -5A.